8,066 research outputs found

    Latest results from a search for neutrinoless double beta decay with NEMO3 and plans for SuperNEMO

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    for the SuperNEMO CollaborationInternational audienceExperimental search for the neutrinoless double beta decay (0ν β β ) is of major importance in particle physics because if observed, it will reveal the Ma jorana nature of the neutrino (ν ≡ ¯ ν ) and may allow an access to the absolute neutrino mass scale. The decay violates the lepton number and is therefore a direct indication for physics beyond the Standard Model. The existence of this process may be related to right-handed currents in electroweak interactions, supersymmetric particles with R-parity nonconservation, and massless Goldstone bosons, such as majorons

    The Diffusion of the Magnetization Profile in the XX-model

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    By the CC^*-algebraic method, we investigate the magnetization profile in the intermediate time of diffusion. We observe a transition from monotone profile to non-monotone profile. This transition is purely thermal.Comment: Accepted for publication in Phys. Rev.

    Influence of Low Energy Hadronic Interactions on Air-shower Simulations

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    Experiments measuring cosmic rays above an energy of 10^14 eV deduce the energy and mass of the primary cosmic ray particles from air-shower simulations. We investigate the importance of hadronic interactions at low and high energies on the distributions of muons and electrons in showers on ground. In air shower simulation programs, hadronic interactions below an energy threshold in the range from 80 GeV to 500 GeV are simulated by low energy interaction models, like Fluka or Gheisha, and above that energy by high energy interaction models, e.g. Sibyll or QGJSJet. We find that the impact on shower development obtained by switching the transition energy from 80 GeV to 500 GeV is comparable to the difference obtained by switching between Fluka and Gheisha.Comment: 4 pages, 6 figures, ISVHECRI 200

    Continuous-action reinforcement learning for memory allocation in virtualized servers

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    In a virtualized computing server (node) with multiple Virtual Machines (VMs), it is necessary to dynamically allocate memory among the VMs. In many cases, this is done only considering the memory demand of each VM without having a node-wide view. There are many solutions for the dynamic memory allocation problem, some of which use machine learning in some form. This paper introduces CAVMem (Continuous-Action Algorithm for Virtualized Memory Management), a proof-of-concept mechanism for a decentralized dynamic memory allocation solution in virtualized nodes that applies a continuous-action reinforcement learning (RL) algorithm called Deep Deterministic Policy Gradient (DDPG). CAVMem with DDPG is compared with other RL algorithms such as Q-Learning (QL) and Deep Q-Learning (DQL) in an environment that models a virtualized node. In order to obtain linear scaling and be able to dynamically add and remove VMs, CAVMem has one agent per VM connected via a lightweight coordination mechanism. The agents learn how much memory to bid for or return, in a given state, so that each VM obtains a fair level of performance subject to the available memory resources. Our results show that CAVMem with DDPG performs better than QL and a static allocation case, but it is competitive with DQL. However, CAVMem incurs significant less training overheads than DQL, making the continuous-action approach a more cost-effective solution.This research is part of a project that has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 754337 (EuroEXA) and the European Union’s 7th Framework Programme under grant agreement number 610456 (Euroserver). It also received funding from the Spanish Ministry of Science and Technology (project TIN2015-65316-P), Generalitat de Catalunya (contract 2014-SGR-1272), and the Severo Ochoa Programme (SEV-2015-0493) of the Spanish Government.Peer ReviewedPostprint (author's final draft

    Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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    [EN] The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area.This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales para la Formacion de Doctores" of the Spanish Ministry of Economy and Competitiveness for economical support. X.P., C.L., and C.G. are grateful to C. Frilay for his expertise in the maintenance of the sputtering kit used for the growth of the ZnO films.Blázquez, O.; Frieiro, J.; López-Vidrier, J.; Guillaume, C.; Portier, X.; Labbé, C.; Sanchis Kilders, P.... (2018). Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices. Applied Physics Letters. 113(18):1-6. https://doi.org/10.1063/1.50469111611318I. G. Baek , M. S. Lee , S. Sco , M. J. Lee , D. H. Seo , D.S. Suh , J. C. Park , S. O. Park , H. S. Kim , I. K. Yoo , U.I. Chung , and J. T. Moon , in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 ( IEEE, 2004), pp. 587–590.Waser, R., & Aono, M. (2007). Nanoionics-based resistive switching memories. Nature Materials, 6(11), 833-840. doi:10.1038/nmat2023Kaeriyama, S., Sakamoto, T., Sunamura, H., Mizuno, M., Kawaura, H., Hasegawa, T., … Aono, M. (2005). A nonvolatile programmable solid-electrolyte nanometer switch. 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Nanoscale Memristor Device as Synapse in Neuromorphic Systems. Nano Letters, 10(4), 1297-1301. doi:10.1021/nl904092hVescio, G., Crespo-Yepes, A., Alonso, D., Claramunt, S., Porti, M., Rodriguez, R., … Aymerich, X. (2017). Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization. IEEE Electron Device Letters, 38(4), 457-460. doi:10.1109/led.2017.2668599Valov, I. (2013). Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale. ChemElectroChem, 1(1), 26-36. doi:10.1002/celc.201300165Martín, G., González, M. B., Campabadal, F., Peiró, F., Cornet, A., & Estradé, S. (2017). Transmission electron microscopy assessment of conductive-filament formation in Ni–HfO2–Si resistive-switching operational devices. Applied Physics Express, 11(1), 014101. doi:10.7567/apex.11.014101Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016). Status and Prospects of ZnO-Based Resistive Switching Memory Devices. Nanoscale Research Letters, 11(1). doi:10.1186/s11671-016-1570-yKim, J., & Yong, K. (2011). Mechanism Study of ZnO Nanorod-Bundle Sensors for H2S Gas Sensing. The Journal of Physical Chemistry C, 115(15), 7218-7224. doi:10.1021/jp110129fYuan, Q., Zhao, Y.-P., Li, L., & Wang, T. (2009). Ab Initio Study of ZnO-Based Gas-Sensing Mechanisms: Surface Reconstruction and Charge Transfer. The Journal of Physical Chemistry C, 113(15), 6107-6113. doi:10.1021/jp810161jSeo, J. W., Park, J.-W., Lim, K. S., Yang, J.-H., & Kang, S. J. (2008). Transparent resistive random access memory and its characteristics for nonvolatile resistive switching. Applied Physics Letters, 93(22), 223505. doi:10.1063/1.3041643Rahaman, S. Z., Maikap, S., Chiu, H.-C., Lin, C.-H., Wu, T.-Y., Chen, Y.-S., … Tsai, M.-J. (2010). Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte. Electrochemical and Solid-State Letters, 13(5), H159. doi:10.1149/1.3339449Simanjuntak, F. M., Panda, D., Tsai, T.-L., Lin, C.-A., Wei, K.-H., & Tseng, T.-Y. (2015). Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode. Journal of Materials Science, 50(21), 6961-6969. doi:10.1007/s10853-015-9247-ySimanjuntak, F. M., Prasad, O. K., Panda, D., Lin, C.-A., Tsai, T.-L., Wei, K.-H., & Tseng, T.-Y. (2016). Impacts of Co doping on ZnO transparent switching memory device characteristics. Applied Physics Letters, 108(18), 183506. doi:10.1063/1.4948598Simanjuntak, F. M., Panda, D., Tsai, T.-L., Lin, C.-A., Wei, K.-H., & Tseng, T.-Y. (2015). Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming. Applied Physics Letters, 107(3), 033505. doi:10.1063/1.4927284Liu, Q., Guan, W., Long, S., Jia, R., Liu, M., & Chen, J. (2008). Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted. Applied Physics Letters, 92(1), 012117. doi:10.1063/1.2832660Shuai, Y., Zhou, S., Bürger, D., Helm, M., & Schmidt, H. (2011). Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt. Journal of Applied Physics, 109(12), 124117. doi:10.1063/1.3601113Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., … Chen, L.-J. (2013). Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories. Nano Letters, 13(8), 3671-3677. doi:10.1021/nl4015638Hubbard, W. A., Kerelsky, A., Jasmin, G., White, E. R., Lodico, J., Mecklenburg, M., & Regan, B. C. (2015). Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching. Nano Letters, 15(6), 3983-3987. doi:10.1021/acs.nanolett.5b00901Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., … Liu, M. (2012). Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM. Advanced Materials, 24(14), 1844-1849. doi:10.1002/adma.201104104Zhu, X., Wu, H.-Z., Qiu, D.-J., Yuan, Z., Jin, G., Kong, J., & Shen, W. (2010). Photoluminescence and resonant Raman scattering in N-doped ZnO thin films. Optics Communications, 283(13), 2695-2699. doi:10.1016/j.optcom.2010.03.006Cerqueira, M. F., Vasilevskiy, M. I., Oliveira, F., Rolo, A. G., Viseu, T., Ayres de Campos, J., … Correia, R. (2011). Resonant Raman scattering in ZnO:Mn and ZnO:Mn:Al thin films grown by RF sputtering. Journal of Physics: Condensed Matter, 23(33), 334205. doi:10.1088/0953-8984/23/33/334205Marchewka, A., Roesgen, B., Skaja, K., Du, H., Jia, C.-L., Mayer, J., … Menzel, S. (2015). Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process. Advanced Electronic Materials, 2(1), 1500233. doi:10.1002/aelm.201500233Krzywiecki, M., Grządziel, L., Sarfraz, A., Iqbal, D., Szwajca, A., & Erbe, A. (2015). 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    Born small, die young: Intrinsic, size-selective mortality in marine larval fish

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    Mortality during the early stages is a major cause of the natural variations in the size and recruitment strength of marine fish populations. In this study, the relation between the size-at-hatch and early survival was assessed using laboratory experiments and on field-caught larvae of the European sardine (Sardina pilchardus). Larval size-at-hatch was not related to the egg size but was significantly, positively related to the diameter of the otolith-at-hatch. Otolith diameter-at-hatch was also significantly correlated with survival-at-age in fed and unfed larvae in the laboratory. For sardine larvae collected in the Bay of Biscay during the spring of 2008, otolith radius-at-hatch was also significantly related to viability. Larval mortality has frequently been related to adverse environmental conditions and intrinsic factors affecting feeding ability and vulnerability to predators. Our study offers evidence indicating that a significant portion of fish mortality occurs during the endogenous (yolk) and mixed (yolk /prey) feeding period in the absence of predators, revealing that marine fish with high fecundity, such as small pelagics, can spawn a relatively large amount of eggs resulting in small larvae with no chances to survive. Our findings help to better understand the mass mortalities occurring at early stages of marine fish.info:eu-repo/semantics/publishedVersio

    Inhibition of bladder tumor growth by chitooligosaccharides in an experimental carcinogenesis model

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    Urinary bladder cancer is one of the most common cancers worldwide, with the highest incidence in industrialized countries. Patients with cancer commonly use unconventional and complementary therapy including nutraceuticals. In this study we evaluated the efficacy of chitooligosaccharides (in orange juice) in rat bladder cancer chemoprevention and as therapeutic agent, on a rat model of urinary bladder carcinogenesis induced with N-butyl-N-(4-hydroxybutyl) nitrosamine. Results indicate that chitooligosaccharides may have a preventive effect on bladder cancer development and a curative effect upon established bladder tumors, dependent on the concentration ingested 500 mg/kg b.w., every three days, showed capacity to inhibit and prevent the proliferation of bladder cancer; however, this was associated with secondary effects such as hypercholesterolemia and hypertriglyceridemia. The use of lower doses (50 and 250 mg/kg b.w.) showed only therapeutic effects. It is further suggested that this antitumor effect might be due to its expected anti-inflammatory action, as well as by mechanisms not directly dependent of COX-2 inhibition, such as cellular proliferation control and improvement in antioxidant profile.info:eu-repo/semantics/publishedVersio

    Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices

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    We report on light-activated electroforming of ZnO/p-Si heterojunction memristors with transparent indium tin oxide as the top electrode. Light-generated electron-hole pairs in the p-type substrate are separated by the external electric field and electrons are injected into the active ZnO layer. The additional application of voltage pulses allows achieving different resistance states that end up in the realization of the low resistance state (LRS). This process requires much less voltage compared to dark conditions, thus avoiding undesired current overshoots and achieving a self-compliant device. The transport mechanisms governing each resistance state are studied and discussed. An evolution from an electrode-limited to a space charge-limited transport is observed along the electroforming process before reaching the LRS, which is ascribed to the progressive formation of conductive paths that consequently induce the growth of conductive nanofilaments through the ZnO layer. This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales para la Formación de-Doctores" from the Spanish Ministry of Economy and Competitiveness for economical support. J.L.F. acknowledges the subprogram "Ayudas para la Formación de Profesorado Universitario" (No. FPU16/06257) from the Spanish Ministry of Education, Culture and Sports for economical support. X.P., C.L., and C.G. are grateful to C. Frilay for his expertise in the maintenance of the sputtering setup used for the growth of the ZnO films
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